b b r r i i g g h h t t l l e e d d e e l l e e c c t t r r o o n n i i c c s s c c o o r r p p . . b b m m - - 4 4 1 1 e e g g 5 5 7 7 n n d d ver.1.0 page 1 of 3 since 1981 package dimensions : 74.80(2.945) 12.80(.504) 12.0x12.0 (.472x.472) 3.00(.118) min. 1 0 4 . 6 0 ( 4 . 1 1 8 ) pin 1. 0.80(.031) 5.08x8=40.64(1.600) 76.20(3.000) notes: 1. all dimensions are in millimeters(inches). 2. tolerance is 0.25mm(.01")unless otherwise specified. 3. specifications are subject to change without notice. features : 1. 4.118 inch (104.6mm) matrix height. 2. square size 12.0 12.0mm. 3. low power requirement. 4. excellent characters appearance. 5. solid state reliability. 6. multiplex drive , column cathode com. and row anode com. 7. multi color available. 8. categorized for luminous intensity. 9. stackable vertically and horizontally. description : 1. the BM-41EG57ND is a 104.6mm (4.118")matrix height 57 square matrix display. 2. this product use hi-eff red chips and green chips, the hi-eff red chips are made from gaasp on gap substrate, the green chips are made from gap on gap subtrate. 3. this product have a black face and white squares. 4. this product doesn't contain restriction substance, comply rohs standard. internal circuit diagram : I??? http://www.brtled.com
b b r r i i g g h h t t l l e e d d e e l l e e c c t t r r o o n n i i c c s s c c o o r r p p . . b b m m - - 4 4 1 1 e e g g 5 5 7 7 n n d d ver.1.0 page 2 of 3 since 1981 absolute maximum ratings(ta=25 ) parameter symbol hi-eff red rating green rating unit power dissipation per dot pd 160 160 mw forward current per dot i f 30 30 ma peak forward current per dot i fp ( dut y 1/10, 1khz ) 150 150 ma reverse voltage per dot v r 5 v operating temperature topr -40 ~80 - storage temperature tstg -40 ~85 - soldering temperature ( 1/16" from bod y) ts o l 260 for 5 seconds - electrical and optical characteristics(ta=25 ) hi-eff red parameter symbol condition min. typ. max. unit forward voltage per dot v f i f =10ma - 3.8 5.0 v luminous intensity per dot iv i f =10ma - 15.0 - mcd reverse current per dot i r v r =5v - - 100 a peak wave length p i f =10ma - 640 - nm dominant wave length d i f =10ma 626 - 636 nm spectral line half-width ? i f =10ma - 40 - nm green parameter symbol condition min. typ. max. unit forward voltage per dot v f i f =10ma - 4.2 5.0 v luminous intensity per dot iv i f =10ma - 15.0 - mcd reverse current per dot i r v r =5v - - 100 a peak wave length p i f =10ma - 568 - nm dominant wave length d i f =10ma 569 - 574 nm spectral line half-width ? i f =10ma - 30 - nm I??? http://www.brtled.com
b b r r i i g g h h t t l l e e d d e e l l e e c c t t r r o o n n i i c c s s c c o o r r p p . . b b m m - - 4 4 1 1 e e g g 5 5 7 7 n n d d ver.1.0 page 3 of 3 since 1981 typical electro-optical characteristics curves (25 ambient temperature unless otherwise noted) fig.1 relative radiant intensity vs. wavelength wavelength(nm) forward voltage fig.4 relative luminous forward current(ma) forward voltage (v) r e l a t i v e l u m i n o u s i n t e n s i t y 0.0 0 ( @ 2 0 m a ) 1.0 2.0 f o r w a r d c u r r e n t ( m a ) 3.0 0 30 10 20 40 50 40 10 20 30 50 (g) (e) forward current 4 intensity vs. 123 (e) (g) 5 fig.2 forward current vs. r e l a t i v e r a d i a n t i n t e n s i t y 530 0 0.5 1.0 (g) 560 590 ambient temperature ambient temperature derating curve vs. fig.5 forward current ambient temperature ta( c) ambient temperature ta( c) 0 20 f o r w a r d c u r r e n t ( m a ) 10 30 40 20 40 60 80 r e l a t i v e l u m i n o u s i n t e n s i t y ( @ 2 0 m a ) 0.5 50 -40 0 1.5 1.0 3.0 2.5 2.0 0 -20 20 120 100 40 60 fig.3 relative luminous 620 650 intensity vs. 680 710 (e) I??? http://www.brtled.com
|
